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Single crystal diamond doping new process

  As a superior semiconductor material,diamond is widely used in the electronics industry.In the electronic equipment for transmitting and converting power,diamond semiconductor plays an irreplaceable role.With the great demand for electronic devices due to process development,almost every mechanical device requires an electronic device capable of transmitting,converting,and controlling power.In recent years,scientists have also developed a new process for doping single crystal diamond,which has promoted the further development of electronic equipment.

  Recently,Zhengqiang(Jack)Ma,a professor of computer engineering at the University of Wisconsin,and his colleagues published a new process for doping single crystal diamonds in Applied Physics.

  Diamond has excellent thermal conductivity and fast heat dissipation,which is an excellent choice for the preparation of power electronics.It can replace traditional and expensive cooling equipment.Under high-voltage and high-power conditions,current can quickly pass through the diamond material,thus achieving the development and application of high-efficiency energy-saving equipment.

  But diamond-based electronics manufacturing has one of the biggest technical challenges,the doping process.The doping process is a process of fusing other elemental materials into a semiconductor material and changing its properties.The diamond crystal structure is hard and the doping process is more difficult.

  In recent years,some researchers have proposed that the diamond is boron-plated and then heated to 1450°C to achieve diamond doping;but in the end it is difficult to remove the boron coating.And the process is only effective for polycrystalline diamond.In addition,since the polycrystalline diamond crystal has irregularities,single crystal diamond is superior to the semiconductor material.

  Doping can also be achieved by implanting boron atoms into the process of artificially growing diamond crystals,but the high power microwave required for the process reduces the quality of the single crystal diamond.

  Zhengqiang(Jack)Ma and colleagues achieved a single crystal diamond boron doping technique at a lower temperature through a series of experiments without any quality degradation.The staff found that the silicon wafer was boron-doped and then combined with a single crystal diamond bond to heat to 800°C,and the boron atoms were transferred from the silicon wafer to the diamond.It has also been found that boron-doped silicon exhibits vacancy defects due to the loss of one atom in the crystal lattice structure,while carbon atoms from diamonds fill these defects and leave vacancies for the transferred boron atoms.

  The technology can also be selectively doped to better control the manufacturing process of the device.Doping of single crystal diamond can be achieved by simply bonding silicon to the carbon vacancies at the desired location of the diamond.

  This new process is only effective for P-type doping,and the semiconductor material is doped with an element capable of providing positive carriers.(Under this condition,the absence of electrons is called a hole)

  Zhengqiang(Jack)Ma commented:"I think we have found a simple,inexpensive and efficient single crystal diamond doping process."At present,the staff successfully tested the P-type single crystal diamond semiconductor material on a simple device.

  If an electronic device such as a transistor is to be prepared,it is necessary to use N-type doping to impart a load to the semiconductor material.

  Zhengqiang(Jack)Ma also introduced that the realization of P-type doping is currently a very important technological advancement,which can provide reference for other researchers to solve other problems in the diamond doping process.In fact,single crystal diamonds have considerable applications in other fields,such as power transmission systems for power grids.